FGD3N60LSD datasheet, igbt equivalent, Fairchild Semiconductor

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Features and benefits

* High Current Capability
* Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
* High Input Impedance tm Description Fairchild's Insulated Gate Bipola.

Application

where very low On-Voltage Drop is a required feature. Applications
* HID Lamp Applications
* Piezo Fuel Injecti.

Description

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Applications
* HID Lamp Applications
* Piezo Fuel Inject.

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